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Description
Jun 18, 2007 K2 = Part Number Code for TN0200K y = Year Code w = Week Code l = Lot Traceability. Ordering Information: TN0200K - T1 - E3 (Lead (Pb)-free). Nov 9, 2006 TN0200K - T1 - E3 (Lead (Pb)-free version) Replaces TN0200T-T1. NS denotes parameter not specified. Specification comparisons are supplied Si2312BDS. 20. 8. 0.031. 0.037. 0.047. 5. 7.5. 1.25. Si2314EDS. 20. 12. 0.033. 0.04. 0.051. 4.9. 11. 1.25. Si2302ADS. 20. 8. 0.085. 0.115. 2.4. 4. 0.9. TN0200K .
| Part Number | TN0200KT1E3 |
| Main Category | Discrete Semiconductor Products |
| Sub Category | Transistors - FETs, MOSFETs - Single |
| Brand | Vishay |
| Description | MOSFET N-CH 20V SOT23-3 |
| Series | TrenchFET |
| Packaging | |
| FET Type | N-Channel |
| Technology | MOSFET (Metal Oxide) |
| Drain to Source Voltage (Vdss) | 20V |
| Current - Continuous Drain (Id) @ 25°C | - |
| Drive Voltage (Max Rds On, Min Rds On) | - |
| Vgs(th) (Max) @ Id | 1V @ 50µA |
| Gate Charge (Qg) (Max) @ Vgs | 2nC @ 4.5V |
| Input Capacitance (Ciss) (Max) @ Vds | - |
| Vgs (Max) | - |
| FET Feature | - |
| Power Dissipation (Max) | 350mW (Ta) |
| Rds On (Max) @ Id, Vgs | 400 mOhm @ 600mA, 4.5V |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Mounting Type | Surface Mount |
| Supplier Device Package | SOT-23-3 (TO-236) |
| Package / Case | TO-236-3, SC-59, SOT-23-3 |
| Image |  |
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