Part Number | SUD20N10-66L-GE3 |
Main Category | Discrete Semiconductor Products |
Sub Category | Transistors - FETs, MOSFETs - Single |
Brand | Vishay |
Description | MOSFET N-CH 100V 16.9A TO-252 |
Series | TrenchFET |
Packaging | Tape & Reel (TR) |
FET Type | N-Channel |
Technology | MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss) | 100V |
Current - Continuous Drain (Id) @ 25°C | 16.9A (Tc) |
Drive Voltage (Max Rds On, Min Rds On) | - |
Vgs(th) (Max) @ Id | 3V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs | 30nC @ 10V |
Input Capacitance (Ciss) (Max) @ Vds | 860pF @ 50V |
Vgs (Max) | - |
FET Feature | - |
Power Dissipation (Max) | 2.1W (Ta), 41.7W (Tc) |
Rds On (Max) @ Id, Vgs | 66 mOhm @ 6.6A, 10V |
Operating Temperature | -55°C ~ 150°C (TJ) |
Mounting Type | Surface Mount |
Supplier Device Package | TO-252 |
Package / Case | TO-252-3, DPak (2 Leads + Tab), SC-63 |
Image |
SUD20N10-66L-GE3
Vishay Thin Film
16320
0.65
HK HEQING ELECTRONICS LIMITED
SUD20N10-66L-GE3
VISH
11030
1.6725
CIS Ltd (CHECK IC SOLUTION LIMITED)
SUD20N10-66L-GE3
Vishay / BC Components
9321
2.695
ATLANTIC TECHNOLOGY LIMITED
SUD20N10-66L-GE3
VISHAY GENERAL
30870
3.7175
OCEANIA INTERNATIONAL INDUSTRIAL LIMITED
SUD20N10-66L-GE3
Vishay Siliconix
100
4.74
Yingxinyuan INT'L (Group) Limited