Part Number | SQJ860EP-T1_GE3 |
Main Category | Discrete Semiconductor Products |
Sub Category | Transistors - FETs, MOSFETs - Single |
Brand | Vishay |
Description | MOSFET N-CH 40V 60A SO8 |
Series | Automotive, AEC-Q101, TrenchFET |
Packaging | Tape & Reel (TR) |
FET Type | N-Channel |
Technology | MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss) | 40V |
Current - Continuous Drain (Id) @ 25°C | 60A (Tc) |
Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V |
Vgs(th) (Max) @ Id | 2.5V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs | 55nC @ 10V |
Input Capacitance (Ciss) (Max) @ Vds | 2700pF @ 25V |
Vgs (Max) | ±20V |
FET Feature | - |
Power Dissipation (Max) | 48W (Tc) |
Rds On (Max) @ Id, Vgs | 6 mOhm @ 10A, 10V |
Operating Temperature | -55°C ~ 175°C (TJ) |
Mounting Type | Surface Mount |
Supplier Device Package | PowerPAK SO-8 |
Package / Case | PowerPAK SO-8 |
Image |
SQJ860EP-T1_BE3
Vishay Thin Film
55200
0.48
WEISOK ELECTRONICS (HK) TECHNOLOGY LIMITED
SQJ860EP-T1_GE3
VISH
10000
1.6425
Shenzhen Xinxin Intelligent Electronics Co., Ltd
SQJ860EP-T1_GE3
Vishay / BC Components
12000
2.805
LYT (HONGKONG) CO., LIMITED
SQJ860EP-T1_GE3
VISHAY GENERAL
12000
3.9675
SEMICON INTERNATIONAL (HONG KONG) CO., LIMITED
SQJ860EP-T1_GE3
Vishay Siliconix
2000
5.13
Shenzhen HTIC Electronic Co.,Ltd