Description
MOSFET 2N-CH 30V 24A POWERPAIR Series: TrenchFET? FET Type: 2 N-Channel (Half Bridge) FET Feature: Logic Level Gate Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25~C: 24A, 28A Rds On (Max) @ Id, Vgs: 7.2 mOhm @ 19.4A, 10V Vgs(th) (Max) @ Id: 2.4V @ 250米A Gate Charge (Qg) @ Vgs: 45nC @ 10V Input Capacitance (Ciss) @ Vds: 1830pF @ 15V Power - Max: 48W, 100W Operating Temperature: -55~C ~ 150~C (TJ) Mounting Type: Surface Mount Package / Case: 6-PowerPair? Supplier Device Package: 6-PowerPair?
Part Number | SIZ900DT-T1-GE3 |
Main Category | Discrete Semiconductor Products |
Sub Category | Transistors - FETs, MOSFETs - Arrays |
Brand | Vishay |
Description | MOSFET 2N-CH 30V 24A POWERPAIR |
Series | TrenchFET |
Packaging | Cut Tape (CT) |
FET Type | 2 N-Channel (Half Bridge) |
FET Feature | Logic Level Gate |
Drain to Source Voltage (Vdss) | 30V |
Current - Continuous Drain (Id) @ 25°C | 24A, 28A |
Rds On (Max) @ Id, Vgs | 7.2 mOhm @ 19.4A, 10V |
Vgs(th) (Max) @ Id | 2.4V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs | 45nC @ 10V |
Input Capacitance (Ciss) (Max) @ Vds | 1830pF @ 15V |
Power - Max | 48W, 100W |
Operating Temperature | -55°C ~ 150°C (TJ) |
Mounting Type | Surface Mount |
Package / Case | 6-PowerPair |
Supplier Device Package | 6-PowerPair |
Image |
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