Part Number | SIS890DN-T1-GE3 |
Main Category | Discrete Semiconductor Products |
Sub Category | Transistors - FETs, MOSFETs - Single |
Brand | Vishay |
Description | MOSFET N-CH 100V 30A 1212-8 |
Series | TrenchFET |
Packaging | Tape & Reel (TR) |
FET Type | N-Channel |
Technology | MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss) | 100V |
Current - Continuous Drain (Id) @ 25°C | 30A (Tc) |
Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V |
Vgs(th) (Max) @ Id | 3V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs | 29nC @ 10V |
Input Capacitance (Ciss) (Max) @ Vds | 802pF @ 50V |
Vgs (Max) | ±20V |
FET Feature | - |
Power Dissipation (Max) | 3.7W (Ta), 52W (Tc) |
Rds On (Max) @ Id, Vgs | 23.5 mOhm @ 10A, 10V |
Operating Temperature | -55°C ~ 150°C (TJ) |
Mounting Type | Surface Mount |
Supplier Device Package | PowerPAK 1212-8 |
Package / Case | PowerPAK 1212-8 |
Image |
Hot Offer
SIS890DN-T1-GE3
Vishay Siliconix
9780
5.34
SFW Electronic Co., Ltd
SIS890DN-T1-GE3
Vishay Thin Film
3039
0.57
HK HEQING ELECTRONICS LIMITED
SIS890DN-T1-GE3
VISH
1218
1.7625
Gallop Great Holdings (Hong Kong) Limited
SIS890DN-T1-GE3
Vishay / BC Components
5361
2.955
Nosin (HK) Electronics Co.
SIS890DN-T1-GE3
VISHAY GENERAL
1223
4.1475
N&S Electronic Co., Limited