Part Number | SIS888DN-T1-GE3 |
Main Category | Discrete Semiconductor Products |
Sub Category | Transistors - FETs, MOSFETs - Single |
Brand | Vishay |
Description | MOSFET N-CH 150V 20.2A 1212-8S |
Series | ThunderFET |
Packaging | Tape & Reel (TR) |
FET Type | N-Channel |
Technology | MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss) | 150V |
Current - Continuous Drain (Id) @ 25°C | 20.2A (Tc) |
Drive Voltage (Max Rds On, Min Rds On) | 7.5V, 10V |
Vgs(th) (Max) @ Id | 4.2V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs | 14.5nC @ 10V |
Input Capacitance (Ciss) (Max) @ Vds | 420pF @ 75V |
Vgs (Max) | ±20V |
FET Feature | - |
Power Dissipation (Max) | 52W (Tc) |
Rds On (Max) @ Id, Vgs | 58 mOhm @ 10A, 10V |
Operating Temperature | -55°C ~ 150°C (TA) |
Mounting Type | Surface Mount |
Supplier Device Package | PowerPAK 1212-8S (3.3x3.3) |
Package / Case | PowerPAK 1212-8S |
Image |
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WEISOK ELECTRONICS (HK) TECHNOLOGY LIMITED
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