Part Number | SIRA88DP-T1-GE3 |
Main Category | Discrete Semiconductor Products |
Sub Category | Transistors - FETs, MOSFETs - Single |
Brand | Vishay |
Description | MOSFET N-CH 30V 45.5A SO8 |
Series | TrenchFET Gen IV |
Packaging | |
FET Type | N-Channel |
Technology | MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss) | 30V |
Current - Continuous Drain (Id) @ 25°C | 45.5A (Tc) |
Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V |
Vgs(th) (Max) @ Id | 2.4V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs | 12.5nC @ 4.5V |
Input Capacitance (Ciss) (Max) @ Vds | 985pF @ 15V |
Vgs (Max) | +20V, -16V |
FET Feature | - |
Power Dissipation (Max) | 25W (Tc) |
Rds On (Max) @ Id, Vgs | 6.7 mOhm @ 10A, 10V |
Operating Temperature | -55°C ~ 150°C (TJ) |
Mounting Type | Surface Mount |
Supplier Device Package | PowerPAK SO-8 |
Package / Case | PowerPAK SO-8 |
Image |
SIRA88DP-T1-GE3
Vishay Thin Film
4120
0.87
HK HEQING ELECTRONICS LIMITED
SIRA88DP-T1-GE3
VISH
11926
1.94
Gallop Great Holdings (Hong Kong) Limited
SIRA88DP-T1-GE3
Vishay / BC Components
5000
3.01
TIANHAO INDUSTRIAL CO., LIMITED
SiRA88DP-T1-GE3
VISHAY GENERAL
35800
4.08
WEISOK ELECTRONICS (HK) TECHNOLOGY LIMITED
SIRA88DP-T1-GE3
Vishay Siliconix
27780
5.15
CIS Ltd (CHECK IC SOLUTION LIMITED)