Part Number | SIR892DP-T1-GE3 |
Main Category | Discrete Semiconductor Products |
Sub Category | Transistors - FETs, MOSFETs - Single |
Brand | Vishay |
Description | MOSFET N-CH 25V 50A PPAK SO-8 |
Series | TrenchFET |
Packaging | Cut Tape (CT) |
FET Type | N-Channel |
Technology | MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss) | 25V |
Current - Continuous Drain (Id) @ 25°C | 50A (Tc) |
Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V |
Vgs(th) (Max) @ Id | 2.6V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs | 60nC @ 10V |
Input Capacitance (Ciss) (Max) @ Vds | 2645pF @ 10V |
Vgs (Max) | ±20V |
FET Feature | - |
Power Dissipation (Max) | 5W (Ta), 50W (Tc) |
Rds On (Max) @ Id, Vgs | 3.2 mOhm @ 10A, 10V |
Operating Temperature | -55°C ~ 150°C (TJ) |
Mounting Type | Surface Mount |
Supplier Device Package | PowerPAK SO-8 |
Package / Case | PowerPAK SO-8 |
Image |
SiR892DP-T1-GE3
Vishay Thin Film
18188
1.31
Gallop Great Holdings (Hong Kong) Limited
SIR892DP-T1-GE3
VISH
35800
2.0575
WEISOK ELECTRONICS (HK) TECHNOLOGY LIMITED
SiR892DP-T1-GE3
Vishay / BC Components
50000
2.805
Hong Kong Yingweida Electronics Co., Ltd.
SIR892DP-T1-GE3
VISHAY GENERAL
3000
3.5525
HXY Electronics (HK) Co.,Limited
SiR892DP-T1-GE3
Vishay Siliconix
4868000
4.3
Shenzhen WTX Capacitor Co., Ltd.