Part Number | SIR846DP-T1-GE3 |
Main Category | Discrete Semiconductor Products |
Sub Category | Transistors - FETs, MOSFETs - Single |
Brand | Vishay |
Description | MOSFET N-CH 100V 60A PPAK SO-8 |
Series | TrenchFET |
Packaging | Cut Tape (CT) |
FET Type | N-Channel |
Technology | MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss) | 100V |
Current - Continuous Drain (Id) @ 25°C | 60A (Tc) |
Drive Voltage (Max Rds On, Min Rds On) | 7.5V, 10V |
Vgs(th) (Max) @ Id | 3.5V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs | 72nC @ 10V |
Input Capacitance (Ciss) (Max) @ Vds | 2870pF @ 50V |
Vgs (Max) | ±20V |
FET Feature | - |
Power Dissipation (Max) | 6.25W (Ta), 104W (Tc) |
Rds On (Max) @ Id, Vgs | 7.8 mOhm @ 20A, 10V |
Operating Temperature | -55°C ~ 150°C (TJ) |
Mounting Type | Surface Mount |
Supplier Device Package | PowerPAK SO-8 |
Package / Case | PowerPAK SO-8 |
Image |
SIR846DP-T1-GE3
Vishay Thin Film
1928
0.37
IC Chip Co., Ltd.
SIR846DP-T1-GE3
VISH
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0.5425
HK HEQING ELECTRONICS LIMITED
SIR846DP-T1-GE3
Vishay / BC Components
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CIS Ltd (CHECK IC SOLUTION LIMITED)
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Ande Electronics Co., Limited
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WEISOK ELECTRONICS (HK) TECHNOLOGY LIMITED