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Description
Jan 11, 2010 40. 0.019 at VGS = 10 V. 21. 5.8 nC. 0.0225 at VGS = 4.5 V. 19.6. Ordering Information: SiR836DP -T1-GE3 (Lead (Pb)-free and Halogen-free). SPICE Device Model SiR836DP www.vishay.com. Vishay Siliconix. S13-1592- Rev. B, 22-Jul-13. 1. Document Number: 65570. THIS DOCUMENT IS SUBJECT 22uH. Inductor, SMT Power, 8.6Asat, 2.05 milliohm. 1.100 x 1.100 inch SER2915H-223KL Coilcraft. 1. Q3. SiR836DP . MOSFET, N-ch, 40V, 8.5A, 22.5- milliohm. MMBT2222A. Bipolar, NPN, 40V, 600mA. SOT23. MMBT2222ALT1. On Semi. 1. Q3. SiR836DP . MOSFET, NChannel, 40V, 21 A, 0.019 millohm. PWRPAK S0-8. May 6, 2011 3) Inductor: Irms=3.44Arms, Ipk=3.88Apk, di=960mApp @ 24Vin. 4) use FET w/ low gate charge <30nC, here SiR836DP w/ 18nCmax. Vin.
| Part Number | SIR836DP |
| Brand | Vishay |
| Image |  |
SiR836DP
Vishay Thin Film
6000
0.89
Shenzhen Pohonda Electronics Co.,Ltd.
SIR836DP
VISH
9559
1.775
ATLANTIC TECHNOLOGY LIMITED
SIR836DP
Vishay / BC Components
31108
2.66
OCEANIA INTERNATIONAL INDUSTRIAL LIMITED
SIR836DP-T1-GE3
VISHAY GENERAL
7280
3.545
RX ELECTRONICS LIMITED
SIR836DP-T1-GE3
Vishay Siliconix
400
4.43
Yingxinyuan INT'L (Group) Limited
