Part Number | SIR412DP-T1-GE3 |
Main Category | Discrete Semiconductor Products |
Sub Category | Transistors - FETs, MOSFETs - Single |
Brand | Vishay |
Description | MOSFET N-CH 25V 20A PPAK SO-8 |
Series | TrenchFET |
Packaging | Cut Tape (CT) |
FET Type | N-Channel |
Technology | MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss) | 25V |
Current - Continuous Drain (Id) @ 25°C | 20A (Tc) |
Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V |
Vgs(th) (Max) @ Id | 2.5V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs | 16nC @ 10V |
Input Capacitance (Ciss) (Max) @ Vds | 600pF @ 10V |
Vgs (Max) | ±20V |
FET Feature | - |
Power Dissipation (Max) | 3.9W (Ta), 15.6W (Tc) |
Rds On (Max) @ Id, Vgs | 12 mOhm @ 10A, 10V |
Operating Temperature | -55°C ~ 150°C (TJ) |
Mounting Type | Surface Mount |
Supplier Device Package | PowerPAK SO-8 |
Package / Case | PowerPAK SO-8 |
Image |
SiR412DP-T1-GE3
Vishay Thin Film
8228
1.05
Gallop Great Holdings (Hong Kong) Limited
SIR412DP-T1-GE3
VISH
35800
2.1025
WEISOK ELECTRONICS (HK) TECHNOLOGY LIMITED
SiR412DP-T1-GE3
Vishay / BC Components
50000
3.155
Hong Kong Yingweida Electronics Co., Ltd.
SIR412DP-T1-GE3
VISHAY GENERAL
1530
4.2075
Cicotex Electronics (HK) Limited
SiR412DP-T1-GE3
Vishay Siliconix
4868000
5.26
Shenzhen WTX Capacitor Co., Ltd.