Part Number | SIHU3N50D-E3 |
Main Category | Discrete Semiconductor Products |
Sub Category | Transistors - FETs, MOSFETs - Single |
Brand | Vishay |
Description | MOSFET N-CH 500V 3A TO251 IPAK |
Series | - |
Packaging | Tube |
FET Type | N-Channel |
Technology | MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss) | 500V |
Current - Continuous Drain (Id) @ 25°C | 3A (Tc) |
Drive Voltage (Max Rds On, Min Rds On) | - |
Vgs(th) (Max) @ Id | 5V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs | 12nC @ 10V |
Input Capacitance (Ciss) (Max) @ Vds | 175pF @ 100V |
Vgs (Max) | - |
FET Feature | - |
Power Dissipation (Max) | 69W (Tc) |
Rds On (Max) @ Id, Vgs | 3.2 Ohm @ 2.5A, 10V |
Operating Temperature | -55°C ~ 150°C (TJ) |
Mounting Type | Through Hole |
Supplier Device Package | TO-251AA |
Package / Case | TO-251-3 Short Leads, IPak, TO-251AA |
Image |
SIHU3N50D-E3
Vishay Thin Film
1000
1.42
MY Group (Asia) Limited
SIHU3N50DA-GE3
VISH
1000
2.68333333333333
BD Electronics Ltd
SiHU3N50D
Vishay / BC Components
99899
3.94666666666667
Shinever Technology Limited
SIHU3N50D-GE3
VISHAY GENERAL
1000
5.21
MY Group (Asia) Limited