Part Number | SIHP33N60E-GE3 |
Main Category | Discrete Semiconductor Products |
Sub Category | Transistors - FETs, MOSFETs - Single |
Brand | Vishay |
Description | MOSFET N-CH 600V 33A TO-220AB |
Series | - |
Packaging | Bulk |
FET Type | N-Channel |
Technology | MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss) | 600V |
Current - Continuous Drain (Id) @ 25°C | 33A (Tc) |
Drive Voltage (Max Rds On, Min Rds On) | 10V |
Vgs(th) (Max) @ Id | 4V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs | 150nC @ 10V |
Input Capacitance (Ciss) (Max) @ Vds | 3508pF @ 100V |
Vgs (Max) | ±30V |
FET Feature | - |
Power Dissipation (Max) | 278W (Tc) |
Rds On (Max) @ Id, Vgs | 99 mOhm @ 16.5A, 10V |
Operating Temperature | -55°C ~ 150°C (TJ) |
Mounting Type | Through Hole |
Supplier Device Package | TO-220AB |
Package / Case | TO-220-3 |
Image |
Hot Offer
SIHP33N60E-GE3
Vishay Siliconix
33000
4.57
DINGSEN ELECTRONICS TECHNOLOGY CO., LIMITED
SIHP33N60E-GE3
Vishay Thin Film
82
1.4
Yingxinyuan INT'L (Group) Limited
SIHP33N60E-GE3
VISH
66236
2.1925
N&S Electronic Co., Limited
SIHP33N60E-GE3
Vishay / BC Components
14200
2.985
N&S Electronic Co., Limited
SIHP33N60E-GE3
VISHAY GENERAL
11700
3.7775
CIS Ltd (CHECK IC SOLUTION LIMITED)