Part Number | SIHG30N60E-E3 |
Main Category | Discrete Semiconductor Products |
Sub Category | Transistors - FETs, MOSFETs - Single |
Brand | Vishay |
Description | MOSFET N-CH 600V 29A TO247AC |
Series | - |
Packaging | Tube |
FET Type | N-Channel |
Technology | MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss) | 600V |
Current - Continuous Drain (Id) @ 25°C | 29A (Tc) |
Drive Voltage (Max Rds On, Min Rds On) | - |
Vgs(th) (Max) @ Id | 4V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs | 130nC @ 10V |
Input Capacitance (Ciss) (Max) @ Vds | 2600pF @ 100V |
Vgs (Max) | - |
FET Feature | - |
Power Dissipation (Max) | 250W (Tc) |
Rds On (Max) @ Id, Vgs | 125 mOhm @ 15A, 10V |
Operating Temperature | -55°C ~ 150°C (TJ) |
Mounting Type | Through Hole |
Supplier Device Package | TO-247AC |
Package / Case | TO-247-3 |
Image |
SIHG30N60E-GE3
Vishay Thin Film
500
0.93
IC WELL ELECTRONICS (HK) CO., LIMITED
SIHG30N60E-GE3
VISH
14000
1.2225
MY Group (Asia) Limited
SIHG30N60E
Vishay / BC Components
55
1.515
Yingxinyuan INT'L (Group) Limited
SIHG30N60E-GE3
VISHAY GENERAL
4464
1.8075
RX ELECTRONICS LIMITED
SIHG30N60E-GE3
Vishay Siliconix
5000
2.1
Ande Electronics Co., Limited