Description
SQ7414AENW- T1 - GE3 . ABSOLUTE MAXIMUM RATINGS (TC = 25 C, unless otherwise noted). PARAMETER. SYMBOL. LIMIT. UNIT. Drain-Source Voltage.
Part Number | SIE882DFT1GE3 |
Main Category | Discrete Semiconductor Products |
Sub Category | Transistors - FETs, MOSFETs - Single |
Brand | Vishay |
Description | MOSFET N-CH 25V 60A POLARPAK |
Series | TrenchFET |
Packaging | Tape & Reel (TR) |
FET Type | N-Channel |
Technology | MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss) | 25V |
Current - Continuous Drain (Id) @ 25°C | 60A (Tc) |
Drive Voltage (Max Rds On, Min Rds On) | - |
Vgs(th) (Max) @ Id | 2.2V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs | 145nC @ 10V |
Input Capacitance (Ciss) (Max) @ Vds | 6400pF @ 12.5V |
Vgs (Max) | - |
FET Feature | - |
Power Dissipation (Max) | 5.2W (Ta), 125W (Tc) |
Rds On (Max) @ Id, Vgs | 1.4 mOhm @ 20A, 10V |
Operating Temperature | -55°C ~ 150°C (TJ) |
Mounting Type | Surface Mount |
Supplier Device Package | 10-PolarPAK (L) |
Package / Case | 10-PolarPAK (L) |
Image |
SiE882DF-T1-GE3
Vishay Thin Film
3500
0.74
Digchip Technology Co.,Limited
SIE882DF-T1-GE3
VISH
3000
1.82666666666667
Bonase Electronics (HK) Co., Limited
SIE882DF-T1-GE3
Vishay / BC Components
1000
2.91333333333333
MY Group (Asia) Limited
SIE882DF-T1-GE3
VISHAY GENERAL
19000
4
Charlott-Electronic