Part Number | SIE860DF-T1-GE3 |
Main Category | Discrete Semiconductor Products |
Sub Category | Transistors - FETs, MOSFETs - Single |
Brand | Vishay |
Description | MOSFET N-CH 30V 60A POLARPAK |
Series | TrenchFET |
Packaging | |
FET Type | N-Channel |
Technology | MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss) | 30V |
Current - Continuous Drain (Id) @ 25°C | 60A (Tc) |
Drive Voltage (Max Rds On, Min Rds On) | - |
Vgs(th) (Max) @ Id | 2.5V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs | 105nC @ 10V |
Input Capacitance (Ciss) (Max) @ Vds | 4500pF @ 15V |
Vgs (Max) | - |
FET Feature | - |
Power Dissipation (Max) | 5.2W (Ta), 104W (Tc) |
Rds On (Max) @ Id, Vgs | 2.1 mOhm @ 21.7A, 10V |
Operating Temperature | -55°C ~ 150°C (TJ) |
Mounting Type | Surface Mount |
Supplier Device Package | 10-PolarPAK (M) |
Package / Case | 10-PolarPAK (M) |
Image |
SIE860DF-T1-GE3
Vishay Thin Film
7004
0.44
Bonase Electronics (HK) Co., Limited
SIE860DF-T1-GE3
VISH
5408
1.8275
MY Group (Asia) Limited
SIE860DF-T1-GE3
Vishay / BC Components
9511
3.215
Shenzhen Kecheng Electronics Co., Limited
SIE860DF-T1-E3
VISHAY GENERAL
1111
4.6025
MY Group (Asia) Limited
SIE860DF-T1-E3
Vishay Siliconix
9010
5.99
IC WELL ELECTRONICS (HK) CO., LIMITED