Part Number | SIE836DF-T1-E3 |
Main Category | Discrete Semiconductor Products |
Sub Category | Transistors - FETs, MOSFETs - Single |
Brand | Vishay |
Description | MOSFET N-CH 200V 18.3A POLARPAK |
Series | TrenchFET |
Packaging | Tape & Reel (TR) |
FET Type | N-Channel |
Technology | MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss) | 200V |
Current - Continuous Drain (Id) @ 25°C | 18.3A (Tc) |
Drive Voltage (Max Rds On, Min Rds On) | - |
Vgs(th) (Max) @ Id | 4.5V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs | 41nC @ 10V |
Input Capacitance (Ciss) (Max) @ Vds | 1200pF @ 100V |
Vgs (Max) | - |
FET Feature | - |
Power Dissipation (Max) | 5.2W (Ta), 104W (Tc) |
Rds On (Max) @ Id, Vgs | 130 mOhm @ 4.1A, 10V |
Operating Temperature | -55°C ~ 150°C (TJ) |
Mounting Type | Surface Mount |
Supplier Device Package | 10-PolarPAK (SH) |
Package / Case | 10-PolarPAK (SH) |
Image |
SIE836DF-T1-E3
Vishay Thin Film
1000
1.85
MY Group (Asia) Limited
SiE836DF
VISH
5311
3.37
Dedicate Electronics (HK) Limited
SIE836DF-T1-GE3
Vishay / BC Components
1000
4.89
MY Group (Asia) Limited