Part Number | SIB411DK-T1-E3 |
Main Category | Discrete Semiconductor Products |
Sub Category | Transistors - FETs, MOSFETs - Single |
Brand | Vishay |
Description | MOSFET P-CH 20V 9A SC75-6 |
Series | TrenchFET |
Packaging | |
FET Type | P-Channel |
Technology | MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss) | 20V |
Current - Continuous Drain (Id) @ 25°C | 9A (Tc) |
Drive Voltage (Max Rds On, Min Rds On) | - |
Vgs(th) (Max) @ Id | 1V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs | 15nC @ 8V |
Input Capacitance (Ciss) (Max) @ Vds | 470pF @ 10V |
Vgs (Max) | - |
FET Feature | - |
Power Dissipation (Max) | 2.4W (Ta), 13W (Tc) |
Rds On (Max) @ Id, Vgs | 66 mOhm @ 3.3A, 4.5V |
Operating Temperature | -55°C ~ 150°C (TJ) |
Mounting Type | Surface Mount |
Supplier Device Package | PowerPAK SC-75-6L Single |
Package / Case | PowerPAK SC-75-6L |
Image |
SIB411DK-T1-E3
Vishay Thin Film
1000
0.35
MY Group (Asia) Limited
SIB411DK-T1-GE3
VISH
1000
1.98666666666667
MY Group (Asia) Limited
SIB411DK-T1-E3
Vishay / BC Components
1000
3.62333333333333
MY Group (Asia) Limited
SIB411DK-T1-E3
VISHAY GENERAL
5800
5.26
Hong Kong In Fortune Electronics Co., Limited