Part Number | SIA444DJT-T1-GE3 |
Main Category | Discrete Semiconductor Products |
Sub Category | Transistors - FETs, MOSFETs - Single |
Brand | Vishay |
Description | MOSFET N-CH 30V 12A SC-70 |
Series | TrenchFET |
Packaging | |
FET Type | N-Channel |
Technology | MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss) | 30V |
Current - Continuous Drain (Id) @ 25°C | 12A (Tc) |
Drive Voltage (Max Rds On, Min Rds On) | - |
Vgs(th) (Max) @ Id | 2.2V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs | 15nC @ 10V |
Input Capacitance (Ciss) (Max) @ Vds | 560pF @ 15V |
Vgs (Max) | ±20V |
FET Feature | - |
Power Dissipation (Max) | 3.5W (Ta), 19W (Tc) |
Rds On (Max) @ Id, Vgs | 17 mOhm @ 7.4A, 10V |
Operating Temperature | -55°C ~ 150°C (TJ) |
Mounting Type | Surface Mount |
Supplier Device Package | - |
Package / Case | PowerPAK SC-70-6 |
Image |
SiA444DJT-T1-GE3
Vishay Thin Film
4969
1.09
HK HEQING ELECTRONICS LIMITED
SIA444DJT-T1-GE3
VISH
2538
2.0975
CIS Ltd (CHECK IC SOLUTION LIMITED)
SIA444DJT-T1-GE3
Vishay / BC Components
5434
3.105
WEISOK ELECTRONICS (HK) TECHNOLOGY LIMITED
SIA444DJT-T1-GE3
VISHAY GENERAL
1894
4.1125
Nosin (HK) Electronics Co.
SiA444DJT-T1-GE3
Vishay Siliconix
1401
5.12
Gallop Great Holdings (Hong Kong) Limited