Part Number | SIA427ADJ-T1-GE3 |
Main Category | Discrete Semiconductor Products |
Sub Category | Transistors - FETs, MOSFETs - Single |
Brand | Vishay |
Description | MOSFET P-CH 8V 12A 6SC-70 |
Series | TrenchFET |
Packaging | Tape & Reel (TR) |
FET Type | P-Channel |
Technology | MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss) | 8V |
Current - Continuous Drain (Id) @ 25°C | 12A (Tc) |
Drive Voltage (Max Rds On, Min Rds On) | 1.2V, 4.5V |
Vgs(th) (Max) @ Id | 800mV @ 250µA |
Gate Charge (Qg) (Max) @ Vgs | 50nC @ 5V |
Input Capacitance (Ciss) (Max) @ Vds | 2300pF @ 4V |
Vgs (Max) | ±5V |
FET Feature | - |
Power Dissipation (Max) | 3.5W (Ta), 19W (Tc) |
Rds On (Max) @ Id, Vgs | 16 mOhm @ 8.2A, 4.5V |
Operating Temperature | -55°C ~ 150°C (TJ) |
Mounting Type | Surface Mount |
Supplier Device Package | PowerPAK SC-70-6 Single |
Package / Case | PowerPAK SC-70-6 |
Image |
SiA427ADJ-T1-GE3
Vishay Thin Film
5000000
0.46
Hongkong Shengshi Electronics Limited
SiA427ADJ-T1-GE3
VISH
33500
1.5175
WEISOK ELECTRONICS (HK) TECHNOLOGY LIMITED
SIA427ADJ-T1-GE3
Vishay / BC Components
12051
2.575
CIS Ltd (CHECK IC SOLUTION LIMITED)
SIA427ADJ-T1-GE3
VISHAY GENERAL
1026
3.6325
Ande Electronics Co., Limited
SiA427ADJ-T1-GE3
Vishay Siliconix
3190
4.69
Yingxinyuan INT'L (Group) Limited