(5/5) based on 18 customer reviews
Description
MOSFET 2N-CH 20V 8A 8-SOIC Series: TrenchFET? FET Type: 2 N-Channel (Dual) FET Feature: Logic Level Gate Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25～C: 8A Rds On (Max) @ Id, Vgs: 18 mOhm @ 8.3A, 4.5V Vgs(th) (Max) @ Id: 1.5V @ 250米A Gate Charge (Qg) @ Vgs: 33nC @ 10V Input Capacitance (Ciss) @ Vds: 1200pF @ 10V Power - Max: 3.1W Operating Temperature: -55～C ~ 150～C (TJ) Mounting Type: Surface Mount Package / Case: 8-SOIC (0.154, 3.90mm Width) Supplier Device Package: 8-SO
| Part Number | SI9926CDY-T1-E3 |
| Main Category | Discrete Semiconductor Products |
| Sub Category | Transistors - FETs, MOSFETs - Arrays |
| Brand | Vishay |
| Description | MOSFET 2N-CH 20V 8A 8-SOIC |
| Series | TrenchFET |
| Packaging | Cut Tape (CT) |
| FET Type | 2 N-Channel (Dual) |
| FET Feature | Logic Level Gate |
| Drain to Source Voltage (Vdss) | 20V |
| Current - Continuous Drain (Id) @ 25°C | 8A |
| Rds On (Max) @ Id, Vgs | 18 mOhm @ 8.3A, 4.5V |
| Vgs(th) (Max) @ Id | 1.5V @ 250µA |
| Gate Charge (Qg) (Max) @ Vgs | 33nC @ 10V |
| Input Capacitance (Ciss) (Max) @ Vds | 1200pF @ 10V |
| Power - Max | 3.1W |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Mounting Type | Surface Mount |
| Package / Case | 8-SOIC (0.154", 3.90mm Width) |
| Supplier Device Package | 8-SO |
| Image |  |
Hot Offer
SI9926CDY-T1-E3
Vishay Siliconix
507
6.13
Yakesheng Elect Trade Co
SI9926CDY-T1-E3
Vishay Thin Film
18385
1.65
HK HEQING ELECTRONICS LIMITED
SI9926CDY-T1-E3
VISH
17485
2.77
Gallop Great Holdings (Hong Kong) Limited
SI9926CDY-T1-E3
Vishay / BC Components
46000
3.89
WEISOK ELECTRONICS (HK) TECHNOLOGY LIMITED
Si9926CDY-T1-E3
VISHAY GENERAL
4868000
5.01
Shenzhen WTX Capacitor Co., Ltd.
