Part Number | SI8469DB-T2-E1 |
Main Category | Discrete Semiconductor Products |
Sub Category | Transistors - FETs, MOSFETs - Single |
Brand | Vishay |
Description | MOSFET P-CH 8V 3.6A MICRO |
Series | TrenchFET |
Packaging | Cut Tape (CT) |
FET Type | P-Channel |
Technology | MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss) | 8V |
Current - Continuous Drain (Id) @ 25°C | 4.6A (Ta) |
Drive Voltage (Max Rds On, Min Rds On) | 4.5V |
Vgs(th) (Max) @ Id | 800mV @ 250µA |
Gate Charge (Qg) (Max) @ Vgs | 17nC @ 4.5V |
Input Capacitance (Ciss) (Max) @ Vds | 900pF @ 4V |
Vgs (Max) | ±5V |
FET Feature | - |
Power Dissipation (Max) | 780mW (Ta), 1.8W (Tc) |
Rds On (Max) @ Id, Vgs | 64 mOhm @ 1.5A, 4.5V |
Operating Temperature | -55°C ~ 150°C (TJ) |
Mounting Type | Surface Mount |
Supplier Device Package | - |
Package / Case | 4-UFBGA |
Image |
SI8469DB-T2-E1
Vishay Thin Film
8453
1.48
IC WELL ELECTRONICS (HK) CO., LIMITED
SI8469DB-T2-E1
VISH
440
2.295
HK HEQING ELECTRONICS LIMITED
SI8469DB-T2-E1
Vishay / BC Components
6470
3.11
CIS Ltd (CHECK IC SOLUTION LIMITED)
SI8469DB-T2-E1
VISHAY GENERAL
4666
3.925
Yingxinyuan INT'L (Group) Limited
SI8469DB-T2-E1
Vishay Siliconix
5151
4.74
HK TWO L ELECTRONIC LIMITED