(5/5) based on 2 customer reviews
Description
MOSFET 2N-CH 60V 6.1A PPAK SO-8 Series: TrenchFET? FET Type: 2 N-Channel (Dual) FET Feature: Standard Drain to Source Voltage (Vdss): 60V Current - Continuous Drain (Id) @ 25～C: 6.1A Rds On (Max) @ Id, Vgs: 23 mOhm @ 9.6A, 10V Vgs(th) (Max) @ Id: 4.5V @ 250米A Gate Charge (Qg) @ Vgs: 65nC @ 10V Input Capacitance (Ciss) @ Vds: - Power - Max: 1.4W Operating Temperature: -55～C ~ 150～C (TJ) Mounting Type: Surface Mount Package / Case: PowerPAK? SO-8 Dual Supplier Device Package: PowerPAK? SO-8 Dual
| Part Number | SI7964DP-T1-GE3 |
| Main Category | Discrete Semiconductor Products |
| Sub Category | Transistors - FETs, MOSFETs - Arrays |
| Brand | Vishay |
| Description | MOSFET 2N-CH 60V 6.1A PPAK SO-8 |
| Series | TrenchFET |
| Packaging | Tape & Reel (TR) |
| FET Type | 2 N-Channel (Dual) |
| FET Feature | Standard |
| Drain to Source Voltage (Vdss) | 60V |
| Current - Continuous Drain (Id) @ 25°C | 6.1A |
| Rds On (Max) @ Id, Vgs | 23 mOhm @ 9.6A, 10V |
| Vgs(th) (Max) @ Id | 4.5V @ 250µA |
| Gate Charge (Qg) (Max) @ Vgs | 65nC @ 10V |
| Input Capacitance (Ciss) (Max) @ Vds | - |
| Power - Max | 1.4W |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Mounting Type | Surface Mount |
| Package / Case | PowerPAK SO-8 Dual |
| Supplier Device Package | PowerPAK SO-8 Dual |
| Image |  |
SI7964DP-T1-GE3
Vishay Thin Film
50000
1.77
Yingxinyuan INT'L (Group) Limited
SI7964DP-T1-GE3
VISH
9944
3.2725
CIS Ltd (CHECK IC SOLUTION LIMITED)
SI7964DP-T1-GE3
Vishay / BC Components
10000
4.775
Finestock Electronics HK Limited
SI7964DP-T1-GE3
VISHAY GENERAL
8944
6.2775
Ande Electronics Co., Limited
SI7964DP-T1-GE3
Vishay Siliconix
1200
7.78
Bonase Electronics (HK) Co., Limited
