(5/5) based on 3 customer reviews
Description
MOSFET 2N-CH 60V 6.2A PPAK SO-8 Series: TrenchFET? FET Type: 2 N-Channel (Dual) FET Feature: Logic Level Gate Drain to Source Voltage (Vdss): 60V Current - Continuous Drain (Id) @ 25～C: 6.2A Rds On (Max) @ Id, Vgs: 21 mOhm @ 9.7A, 10V Vgs(th) (Max) @ Id: 3V @ 250米A Gate Charge (Qg) @ Vgs: 75nC @ 10V Input Capacitance (Ciss) @ Vds: - Power - Max: 1.4W Operating Temperature: -55～C ~ 150～C (TJ) Mounting Type: Surface Mount Package / Case: PowerPAK? SO-8 Dual Supplier Device Package: PowerPAK? SO-8 Dual
| Part Number | SI7960DP-T1-E3 |
| Main Category | Discrete Semiconductor Products |
| Sub Category | Transistors - FETs, MOSFETs - Arrays |
| Brand | Vishay |
| Description | MOSFET 2N-CH 60V 6.2A PPAK SO-8 |
| Series | TrenchFET |
| Packaging | |
| FET Type | 2 N-Channel (Dual) |
| FET Feature | Logic Level Gate |
| Drain to Source Voltage (Vdss) | 60V |
| Current - Continuous Drain (Id) @ 25°C | 6.2A |
| Rds On (Max) @ Id, Vgs | 21 mOhm @ 9.7A, 10V |
| Vgs(th) (Max) @ Id | 3V @ 250µA |
| Gate Charge (Qg) (Max) @ Vgs | 75nC @ 10V |
| Input Capacitance (Ciss) (Max) @ Vds | - |
| Power - Max | 1.4W |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Mounting Type | Surface Mount |
| Package / Case | PowerPAK SO-8 Dual |
| Supplier Device Package | PowerPAK SO-8 Dual |
| Image |  |
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