(4/5) based on 2 customer reviews
Description
MOSFET 2N-CH 30V 6.4A PPAK SO-8 Series: TrenchFET? FET Type: 2 N-Channel (Dual) FET Feature: Logic Level Gate Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25～C: 6.4A Rds On (Max) @ Id, Vgs: 22 mOhm @ 10A, 10V Vgs(th) (Max) @ Id: 2.4V @ 250米A Gate Charge (Qg) @ Vgs: 20nC @ 10V Input Capacitance (Ciss) @ Vds: - Power - Max: 1.4W Operating Temperature: -55～C ~ 150～C (TJ) Mounting Type: Surface Mount Package / Case: PowerPAK? SO-8 Dual Supplier Device Package: PowerPAK? SO-8 Dual
| Part Number | SI7844DP-T1-GE3 |
| Main Category | Discrete Semiconductor Products |
| Sub Category | Transistors - FETs, MOSFETs - Arrays |
| Brand | Vishay |
| Description | MOSFET 2N-CH 30V 6.4A PPAK SO-8 |
| Series | TrenchFET |
| Packaging | |
| FET Type | 2 N-Channel (Dual) |
| FET Feature | Logic Level Gate |
| Drain to Source Voltage (Vdss) | 30V |
| Current - Continuous Drain (Id) @ 25°C | 6.4A |
| Rds On (Max) @ Id, Vgs | 22 mOhm @ 10A, 10V |
| Vgs(th) (Max) @ Id | 2.4V @ 250µA |
| Gate Charge (Qg) (Max) @ Vgs | 20nC @ 10V |
| Input Capacitance (Ciss) (Max) @ Vds | - |
| Power - Max | 1.4W |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Mounting Type | Surface Mount |
| Package / Case | PowerPAK SO-8 Dual |
| Supplier Device Package | PowerPAK SO-8 Dual |
| Image |  |
SI7844DP-T1-GE3
Vishay Thin Film
8000
0.22
MY Group (Asia) Limited
SI7844DP-T1-GE3
VISH
36160
1.0525
IC Chip Co., Ltd.
SI7844DP-T1-GE3
Vishay / BC Components
50000
1.885
Yingxinyuan INT'L (Group) Limited
SI7844DP-T1-GE3
VISHAY GENERAL
62338
2.7175
OCEANIA INTERNATIONAL INDUSTRIAL LIMITED
SI7844DP-T1-GE3
Vishay Siliconix
6389
3.55
CIS Ltd (CHECK IC SOLUTION LIMITED)
