Part Number | SI7407DN-T1-GE3 |
Main Category | Discrete Semiconductor Products |
Sub Category | Transistors - FETs, MOSFETs - Single |
Brand | Vishay |
Description | MOSFET P-CH 12V 9.9A PPAK 1212-8 |
Series | TrenchFET |
Packaging | Tape & Reel (TR) |
FET Type | P-Channel |
Technology | MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss) | 12V |
Current - Continuous Drain (Id) @ 25°C | 9.9A (Ta) |
Drive Voltage (Max Rds On, Min Rds On) | - |
Vgs(th) (Max) @ Id | 1V @ 400µA |
Gate Charge (Qg) (Max) @ Vgs | 59nC @ 4.5V |
Input Capacitance (Ciss) (Max) @ Vds | - |
Vgs (Max) | - |
FET Feature | - |
Power Dissipation (Max) | 1.5W (Ta) |
Rds On (Max) @ Id, Vgs | 12 mOhm @ 15.6A, 4.5V |
Operating Temperature | -55°C ~ 150°C (TJ) |
Mounting Type | Surface Mount |
Supplier Device Package | PowerPAK 1212-8 |
Package / Case | PowerPAK 1212-8 |
Image |
SI7407DN-T1-GE3
Vishay Thin Film
1000
0.95
MY Group (Asia) Limited
SI7407DN-T1-GE3
VISH
10687
1.36
CIS Ltd (CHECK IC SOLUTION LIMITED)
SI7407DN-T1-GE3
Vishay / BC Components
6056
1.77
Yingxinyuan INT'L (Group) Limited
SI7407DN-T1-GE3
VISHAY GENERAL
9687
2.18
Ande Electronics Co., Limited
SI7407DN-T1-E3
Vishay Siliconix
1000
2.59
MY Group (Asia) Limited