Part Number | SI7342DP-T1-GE3 |
Main Category | Discrete Semiconductor Products |
Sub Category | Transistors - FETs, MOSFETs - Single |
Brand | Vishay |
Description | MOSFET N-CH 30V 9A PPAK SO-8 |
Series | TrenchFET |
Packaging | Tape & Reel (TR) |
FET Type | N-Channel |
Technology | MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss) | 30V |
Current - Continuous Drain (Id) @ 25°C | 9A (Ta) |
Drive Voltage (Max Rds On, Min Rds On) | - |
Vgs(th) (Max) @ Id | 1.8V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs | 19nC @ 4.5V |
Input Capacitance (Ciss) (Max) @ Vds | 1900pF @ 15V |
Vgs (Max) | - |
FET Feature | - |
Power Dissipation (Max) | 1.8W (Ta) |
Rds On (Max) @ Id, Vgs | 8.25 mOhm @ 15A, 10V |
Operating Temperature | -55°C ~ 150°C (TJ) |
Mounting Type | Surface Mount |
Supplier Device Package | PowerPAK SO-8 |
Package / Case | PowerPAK SO-8 |
Image |
SI7342DP-T1-GE3
Vishay Thin Film
5166
0.03
AIC Semiconductor Co., Limited
SI7342DP-T1-GE3
VISH
2414
0.6775
MY Group (Asia) Limited
SI7342DP-T1-GE3
Vishay / BC Components
4416
1.325
Ande Electronics Co., Limited
SI7342DP-T1-GE3
VISHAY GENERAL
9126
1.9725
OCEANIA INTERNATIONAL INDUSTRIAL LIMITED
SI7342DP-T1-GE3
Vishay Siliconix
6778
2.62
CIS Ltd (CHECK IC SOLUTION LIMITED)