Part Number | SI7120DN-T1-GE3 |
Main Category | Discrete Semiconductor Products |
Sub Category | Transistors - FETs, MOSFETs - Single |
Brand | Vishay |
Description | MOSFET N-CH 60V 6.3A 1212-8 |
Series | TrenchFET |
Packaging | |
FET Type | N-Channel |
Technology | MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss) | 60V |
Current - Continuous Drain (Id) @ 25°C | 6.3A (Ta) |
Drive Voltage (Max Rds On, Min Rds On) | - |
Vgs(th) (Max) @ Id | 3.5V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs | 45nC @ 10V |
Input Capacitance (Ciss) (Max) @ Vds | - |
Vgs (Max) | - |
FET Feature | - |
Power Dissipation (Max) | 1.5W (Ta) |
Rds On (Max) @ Id, Vgs | 19 mOhm @ 10A, 10V |
Operating Temperature | -55°C ~ 150°C (TJ) |
Mounting Type | Surface Mount |
Supplier Device Package | PowerPAK 1212-8 |
Package / Case | PowerPAK 1212-8 |
Image |
SI7120DN-T1-GE3
Vishay Thin Film
1326
0.89
Gallop Great Holdings (Hong Kong) Limited
Si7120DN-T1-GE3
VISH
7093
1.7275
Belt (HK) Electronics Co
Si7120DN-T1-GE3
Vishay / BC Components
50000
2.565
Hong Kong Yingweida Electronics Co., Ltd.
Si7120DN-T1-GE3
VISHAY GENERAL
337380
3.4025
Cicotex Electronics (HK) Limited
SI7120DN-T1-GE3
Vishay Siliconix
200
4.24
Yingxinyuan INT'L (Group) Limited