Part Number | SI6463BDQ-T1-E3 |
Main Category | Discrete Semiconductor Products |
Sub Category | Transistors - FETs, MOSFETs - Single |
Brand | Vishay |
Description | MOSFET P-CH 20V 6.2A 8-TSSOP |
Series | TrenchFET |
Packaging | |
FET Type | P-Channel |
Technology | MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss) | 20V |
Current - Continuous Drain (Id) @ 25°C | 6.2A (Ta) |
Drive Voltage (Max Rds On, Min Rds On) | - |
Vgs(th) (Max) @ Id | 800mV @ 250µA |
Gate Charge (Qg) (Max) @ Vgs | 60nC @ 5V |
Input Capacitance (Ciss) (Max) @ Vds | - |
Vgs (Max) | - |
FET Feature | - |
Power Dissipation (Max) | 1.05W (Ta) |
Rds On (Max) @ Id, Vgs | 15 mOhm @ 7.4A, 4.5V |
Operating Temperature | -55°C ~ 150°C (TJ) |
Mounting Type | Surface Mount |
Supplier Device Package | 8-TSSOP |
Package / Case | 8-TSSOP (0.173", 4.40mm Width) |
Image |
SI6463BDQ-T1-E3
Vishay Thin Film
1983
0.67
Gallop Great Holdings (Hong Kong) Limited
SI6463BDQ-T1-E3
VISH
822
1.81
WEISOK ELECTRONICS (HK) TECHNOLOGY LIMITED
SI6463BDQ-T1-E3
Vishay / BC Components
3003
2.95
Cicotex Electronics (HK) Limited
SI6463BDQ-T1-E3
VISHAY GENERAL
2226
4.09
Far East Electronics Technology Limited
SI6463BDQ-T1-E3
Vishay Siliconix
1488
5.23
Nosin (HK) Electronics Co.