Part Number | SI5906DU-T1-GE3 |
Main Category | Discrete Semiconductor Products |
Sub Category | Transistors - FETs, MOSFETs - Arrays |
Brand | Vishay |
Description | MOSFET 2N-CH 30V 6A PPAK FET |
Series | TrenchFET |
Packaging | |
FET Type | 2 N-Channel (Dual) |
FET Feature | Logic Level Gate |
Drain to Source Voltage (Vdss) | 30V |
Current - Continuous Drain (Id) @ 25°C | 6A |
Rds On (Max) @ Id, Vgs | 31 mOhm @ 4.8A, 10V |
Vgs(th) (Max) @ Id | 2.2V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs | 8.6nC @ 10V |
Input Capacitance (Ciss) (Max) @ Vds | 300pF @ 15V |
Power - Max | 10.4W |
Operating Temperature | -55°C ~ 150°C (TJ) |
Mounting Type | Surface Mount |
Package / Case | PowerPAK ChipFET,Dual |
Supplier Device Package | PowerPAK ChipFet Dual |
Image |
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