Part Number | SI5902BDC-T1-E3 |
Main Category | Discrete Semiconductor Products |
Sub Category | Transistors - FETs, MOSFETs - Arrays |
Brand | Vishay |
Description | MOSFET 2N-CH 30V 4A 1206-8 |
Series | TrenchFET |
Packaging | Cut Tape (CT) |
FET Type | 2 N-Channel (Dual) |
FET Feature | Logic Level Gate |
Drain to Source Voltage (Vdss) | 30V |
Current - Continuous Drain (Id) @ 25°C | 4A (Tc) |
Rds On (Max) @ Id, Vgs | 65 mOhm @ 3.1A, 10V |
Vgs(th) (Max) @ Id | 3V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs | 7nC @ 10V |
Input Capacitance (Ciss) (Max) @ Vds | 220pF @ 15V |
Power - Max | 3.12W |
Operating Temperature | -55°C ~ 150°C (TJ) |
Mounting Type | Surface Mount |
Package / Case | 8-SMD, Flat Lead |
Supplier Device Package | - |
Image |
SI5902BDC-T1-E3
Vishay Thin Film
7716
0.9
Gallop Great Holdings (Hong Kong) Limited
SI5902BDC-T1-E3
VISH
7448
1.8
Yingxinyuan INT'L (Group) Limited
SI5902BDC-T1-E3
Vishay / BC Components
761
2.7
ATLANTIC TECHNOLOGY LIMITED
SI5902BDC-T1-E3
VISHAY GENERAL
5548
3.6
Hongkong Shengshi Electronics Limited
SI5902BDC-T1-E3
Vishay Siliconix
1733
4.5
HK HEQING ELECTRONICS LIMITED