Part Number | SI5482DU-T1-E3 |
Main Category | Discrete Semiconductor Products |
Sub Category | Transistors - FETs, MOSFETs - Single |
Brand | Vishay |
Description | MOSFET N-CH 30V 12A PPAK CHIPFET |
Series | TrenchFET |
Packaging | |
FET Type | N-Channel |
Technology | MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss) | 30V |
Current - Continuous Drain (Id) @ 25°C | 12A (Tc) |
Drive Voltage (Max Rds On, Min Rds On) | - |
Vgs(th) (Max) @ Id | 2V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs | 51nC @ 10V |
Input Capacitance (Ciss) (Max) @ Vds | 1610pF @ 15V |
Vgs (Max) | - |
FET Feature | - |
Power Dissipation (Max) | 3.1W (Ta), 31W (Tc) |
Rds On (Max) @ Id, Vgs | 15 mOhm @ 7.4A, 10V |
Operating Temperature | -55°C ~ 150°C (TJ) |
Mounting Type | Surface Mount |
Supplier Device Package | PowerPAK ChipFet Single |
Package / Case | PowerPAK ChipFET,Single |
Image |
SI5482DU-T1-E3
Vishay Thin Film
1000
1.26
MY Group (Asia) Limited
SI5482DU-T1-GE3
VISH
1000
2.63666666666667
MY Group (Asia) Limited
SI5482DU-T1-E3
Vishay / BC Components
1000
4.01333333333333
MY Group (Asia) Limited
SI5482DU-T1-E3
VISHAY GENERAL
3000
5.39
Hong Kong In Fortune Electronics Co., Limited