Part Number | SI5441BDC-T1-E3 |
Main Category | Discrete Semiconductor Products |
Sub Category | Transistors - FETs, MOSFETs - Single |
Brand | Vishay |
Description | MOSFET P-CH 20V 4.4A 1206-8 |
Series | TrenchFET |
Packaging | Cut Tape (CT) |
FET Type | P-Channel |
Technology | MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss) | 20V |
Current - Continuous Drain (Id) @ 25°C | 4.4A (Ta) |
Drive Voltage (Max Rds On, Min Rds On) | 2.5V, 4.5V |
Vgs(th) (Max) @ Id | 1.4V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs | 22nC @ 4.5V |
Input Capacitance (Ciss) (Max) @ Vds | - |
Vgs (Max) | ±12V |
FET Feature | - |
Power Dissipation (Max) | 1.3W (Ta) |
Rds On (Max) @ Id, Vgs | 45 mOhm @ 4.4A, 4.5V |
Operating Temperature | -55°C ~ 150°C (TJ) |
Mounting Type | Surface Mount |
Supplier Device Package | 1206-8 ChipFET |
Package / Case | 8-SMD, Flat Lead |
Image |
SI5441BDC-T1-E3
Vishay Thin Film
4999
1.53
Gallop Great Holdings (Hong Kong) Limited
SI5441BDC-T1-E3
VISH
8000
2.0675
Ysx Tech Co., Limited
SI5441BDCT1E3
Vishay / BC Components
100
2.605
FLOWER GROUP(HK)CO.,LTD
SI5441BDC-T1-E3
VISHAY GENERAL
204481
3.1425
Cicotex Electronics (HK) Limited
SI5441BDC-T1-E3
Vishay Siliconix
40
3.68
Yingxinyuan INT'L (Group) Limited