Part Number | SI5414DC-T1-GE3 |
Main Category | Discrete Semiconductor Products |
Sub Category | Transistors - FETs, MOSFETs - Single |
Brand | Vishay |
Description | MOSFET N-CH 20V 6A 1206-8 |
Series | TrenchFET |
Packaging | Tape & Reel (TR) |
FET Type | N-Channel |
Technology | MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss) | 20V |
Current - Continuous Drain (Id) @ 25°C | 6A (Tc) |
Drive Voltage (Max Rds On, Min Rds On) | - |
Vgs(th) (Max) @ Id | 1.5V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs | 41nC @ 10V |
Input Capacitance (Ciss) (Max) @ Vds | 1500pF @ 10V |
Vgs (Max) | - |
FET Feature | - |
Power Dissipation (Max) | 2.5W (Ta), 6.3W (Tc) |
Rds On (Max) @ Id, Vgs | 17 mOhm @ 9.9A, 4.5V |
Operating Temperature | -55°C ~ 150°C (TJ) |
Mounting Type | Surface Mount |
Supplier Device Package | 1206-8 ChipFET |
Package / Case | 8-SMD, Flat Lead |
Image |
SI5414DC-T1-GE3
Vishay Thin Film
5526
0.07
Dedicate Electronics (HK) Limited
SI5414DC-T1-GE3
VISH
18000
0.953333333333333
MY Group (Asia) Limited
SI5414DC-T1-E3
Vishay / BC Components
83000
1.83666666666667
Yingxinyuan INT'L (Group) Limited
SI5414DC-T1-E3
VISHAY GENERAL
5525
2.72
Dedicate Electronics (HK) Limited