Part Number | SI4890DY-T1-GE3 |
Main Category | Discrete Semiconductor Products |
Sub Category | Transistors - FETs, MOSFETs - Single |
Brand | Vishay |
Description | MOSFET N-CH 30V 11A 8-SOIC |
Series | TrenchFET |
Packaging | Tape & Reel (TR) |
FET Type | N-Channel |
Technology | MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss) | 30V |
Current - Continuous Drain (Id) @ 25°C | - |
Drive Voltage (Max Rds On, Min Rds On) | - |
Vgs(th) (Max) @ Id | 800mV @ 250µA (Min) |
Gate Charge (Qg) (Max) @ Vgs | 20nC @ 5V |
Input Capacitance (Ciss) (Max) @ Vds | - |
Vgs (Max) | - |
FET Feature | - |
Power Dissipation (Max) | 2.5W (Ta) |
Rds On (Max) @ Id, Vgs | 12 mOhm @ 11A, 10V |
Operating Temperature | -55°C ~ 150°C (TJ) |
Mounting Type | Surface Mount |
Supplier Device Package | 8-SO |
Package / Case | 8-SOIC (0.154", 3.90mm Width) |
Image |
SI4890DY-T1-GE3
Vishay Thin Film
1000
1.56
MY Group (Asia) Limited
SI4890DY-T1-GE3
VISH
69908
2.5125
AIC Semiconductor Co., Limited
SI4890DY-T1-GE3
Vishay / BC Components
50000
3.465
JDL (HK) TECHNOLOGY LIMITED
SI4890DY-T1-E3
VISHAY GENERAL
50000
4.4175
Yingxinyuan INT'L (Group) Limited
SI4890BDY-T1-E3
Vishay Siliconix
93
5.37
JFJ Electronics Co.,Limited