Part Number | SI4866DYT1GE3 |
Main Category | Discrete Semiconductor Products |
Sub Category | Transistors - FETs, MOSFETs - Single |
Brand | Vishay |
Description | MOSFET N-CH 12V 11A 8-SOIC |
Series | TrenchFET |
Packaging | Tape & Reel (TR) |
FET Type | N-Channel |
Technology | MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss) | 12V |
Current - Continuous Drain (Id) @ 25°C | 11A (Ta) |
Drive Voltage (Max Rds On, Min Rds On) | - |
Vgs(th) (Max) @ Id | 600mV @ 250µA (Min) |
Gate Charge (Qg) (Max) @ Vgs | 30nC @ 4.5V |
Input Capacitance (Ciss) (Max) @ Vds | - |
Vgs (Max) | - |
FET Feature | - |
Power Dissipation (Max) | 1.6W (Ta) |
Rds On (Max) @ Id, Vgs | 5.5 mOhm @ 17A, 4.5V |
Operating Temperature | -55°C ~ 150°C (TJ) |
Mounting Type | Surface Mount |
Supplier Device Package | 8-SO |
Package / Case | 8-SOIC (0.154", 3.90mm Width) |
Image |
SI4866DY-T1-GE3
Vishay Thin Film
1000
0.32
MY Group (Asia) Limited
SI4866DY-T1-GE3
VISH
591
1.1975
Vadas International Co., Ltd.
SI4866BDY-T1-GE3
Vishay / BC Components
4290
2.075
Shenzhen Chuangxinda Electronic-Tech Co.,Ltd
SI4866BDY-T1-E3
VISHAY GENERAL
2004
2.9525
Kwong Shun Electronics (HK)Co.
SI4866BDY
Vishay Siliconix
50
3.83
C&G Electronics (HK) Co., Ltd