Part Number | SI4834BDY-T1-E3 |
Main Category | Discrete Semiconductor Products |
Sub Category | Transistors - FETs, MOSFETs - Arrays |
Brand | Vishay |
Description | MOSFET 2N-CH 30V 5.7A 8-SOIC |
Series | TrenchFET |
Packaging | |
FET Type | 2 N-Channel (Dual) |
FET Feature | Logic Level Gate |
Drain to Source Voltage (Vdss) | 30V |
Current - Continuous Drain (Id) @ 25°C | 5.7A |
Rds On (Max) @ Id, Vgs | 22 mOhm @ 7.5A, 10V |
Vgs(th) (Max) @ Id | 3V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs | 11nC @ 4.5V |
Input Capacitance (Ciss) (Max) @ Vds | - |
Power - Max | 1.1W |
Operating Temperature | -55°C ~ 150°C (TJ) |
Mounting Type | Surface Mount |
Package / Case | 8-SOIC (0.154", 3.90mm Width) |
Supplier Device Package | 8-SO |
Image |
Si4834BDY-T1-E3
Vishay Thin Film
7361
0.19
HK HEQING ELECTRONICS LIMITED
SI4834BDY-T1-E3
VISH
4334
0.675
Gallop Great Holdings (Hong Kong) Limited
SI4834BDY-T1-E3
Vishay / BC Components
2830
1.16
Cicotex Electronics (HK) Limited
SI4834BDY-T1-E3
VISHAY GENERAL
1353
1.645
WEISOK ELECTRONICS (HK) TECHNOLOGY LIMITED
SI4834BDY-T1-E3
Vishay Siliconix
8285
2.13
Shenzhen WTX Capacitor Co., Ltd.