(5/5) based on 12 customer reviews
Description
Datasheet Feb 17, 2004 SI4800 . N-channel TrenchMOS logic level FET. Rev. 02 17 February 2004. Product data. M3D315. 1. Product profile. 1.1 Description. Vishay Siliconix. Si4800BDY. Document Number: 72124. S-83039-Rev. H, 29- Dec-08 www.vishay.com. 1. N-Channel Reduced Q g. , Fast Switching MOSFET. Si4800DY. Vishay Siliconix. Document Number: 70856. S-31062 Rev. B, 26- May-03 www.vishay.com. 1. N-Channel Reducded Qg, Fast Switching MOSFET. Top MOSFET = Si4800 . 100. 120. 140. 160. 180. 200. 220. 240. 260. -60 -30. 0. 30. 60. 90 120 150. I CS. ( . A). TEMPERATURE ( C). Overcurrent Trip Point vs. Jan 15, 2001 Q1. Si4416DY or Si4800 *. 5, 6, 7, 8. 1, 2, 3. R1. L1. C13. 0.1 mF. R11. 0. D2A. CMPD2836. D2B. CMPD2836. Q3. Si4812DY or. Si4800 *. 1. 2, 3.
| Part Number | SI4800B |
| Brand | Vishay |
| Image |  |
Hot Offer
SI4800B
Vishay Siliconix
10
3.14
AI QI ELECTRONIC CO., LIMITED
SI4800B
Vishay Thin Film
786
0.37
HK HEQING ELECTRONICS LIMITED
SI4800B
VISH
500
1.0625
Gallop Great Holdings (Hong Kong) Limited
SI4800B
Vishay / BC Components
6000
1.755
Redstar Electronic Limited
SI4800B
VISHAY GENERAL
5998
2.4475
Huajiaxin Electronic Technology (Hong Kong) Co., Limited
