Description
MOSFET 2N-CH 30V 8A 8-SOIC Series: SkyFET?, TrenchFET? FET Type: 2 N-Channel (Dual) FET Feature: Standard Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25~C: 8A Rds On (Max) @ Id, Vgs: 16 mOhm @ 9.6A, 10V Vgs(th) (Max) @ Id: 2.5V @ 1mA Gate Charge (Qg) @ Vgs: 60nC @ 10V Input Capacitance (Ciss) @ Vds: 2458pF @ 15V Power - Max: 3.3W, 3.1W Operating Temperature: -55~C ~ 150~C (TJ) Mounting Type: Surface Mount Package / Case: 8-SOIC (0.154, 3.90mm Width) Supplier Device Package: 8-SO
Part Number | SI4622DY-T1-GE3 |
Main Category | Discrete Semiconductor Products |
Sub Category | Transistors - FETs, MOSFETs - Arrays |
Brand | Vishay |
Description | MOSFET 2N-CH 30V 8A 8-SOIC |
Series | SkyFET, TrenchFET |
Packaging | |
FET Type | 2 N-Channel (Dual) |
FET Feature | Standard |
Drain to Source Voltage (Vdss) | 30V |
Current - Continuous Drain (Id) @ 25°C | 8A |
Rds On (Max) @ Id, Vgs | 16 mOhm @ 9.6A, 10V |
Vgs(th) (Max) @ Id | 2.5V @ 1mA |
Gate Charge (Qg) (Max) @ Vgs | 60nC @ 10V |
Input Capacitance (Ciss) (Max) @ Vds | 2458pF @ 15V |
Power - Max | 3.3W, 3.1W |
Operating Temperature | -55°C ~ 150°C (TJ) |
Mounting Type | Surface Mount |
Package / Case | 8-SOIC (0.154", 3.90mm Width) |
Supplier Device Package | 8-SO |
Image |
Hot Offer
SI4622DY-T1-GE3
Vishay Siliconix
10000
5.44
Riking Technology (HK) Co., Limited
SI4622DY-T1-GE3
Vishay Thin Film
8000
1.52
MY Group (Asia) Limited
SI4622DY-T1-GE3
VISH
10000
2.5
HK Niuhuasi Technology Limited
SI4622DY-T1-GE3
Vishay / BC Components
11000
3.48
CIS Ltd (CHECK IC SOLUTION LIMITED)
SI4622DY-T1-GE3
VISHAY GENERAL
38900
4.46
Yingxinyuan INT'L (Group) Limited