Description
MOSFET N/P-CH 20V 8-SOIC Series: TrenchFET? FET Type: N and P-Channel FET Feature: Logic Level Gate Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25~C: - Rds On (Max) @ Id, Vgs: 25 mOhm @ 7.1A, 4.5V Vgs(th) (Max) @ Id: 1.6V @ 250米A Gate Charge (Qg) @ Vgs: 50nC @ 4.5V Input Capacitance (Ciss) @ Vds: - Power - Max: 2W Operating Temperature: -55~C ~ 150~C (TJ) Mounting Type: Surface Mount Package / Case: 8-SOIC (0.154, 3.90mm Width) Supplier Device Package: 8-SO
Part Number | SI4562DY-T1-GE3 |
Main Category | Discrete Semiconductor Products |
Sub Category | Transistors - FETs, MOSFETs - Arrays |
Brand | Vishay |
Description | MOSFET N/P-CH 20V 8-SOIC |
Series | TrenchFET |
Packaging | Tape & Reel (TR) |
FET Type | N and P-Channel |
FET Feature | Logic Level Gate |
Drain to Source Voltage (Vdss) | 20V |
Current - Continuous Drain (Id) @ 25°C | - |
Rds On (Max) @ Id, Vgs | 25 mOhm @ 7.1A, 4.5V |
Vgs(th) (Max) @ Id | 1.6V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs | 50nC @ 4.5V |
Input Capacitance (Ciss) (Max) @ Vds | - |
Power - Max | 2W |
Operating Temperature | -55°C ~ 150°C (TJ) |
Mounting Type | Surface Mount |
Package / Case | 8-SOIC (0.154", 3.90mm Width) |
Supplier Device Package | 8-SO |
Image |
SI4562DY-T1-GE3
Vishay Thin Film
8000
1.46
MY Group (Asia) Limited
SI4562DY-T1-GE3
VISH
99899
2.35
Shinever Technology Limited
SI4562DY-T1-GE3
Vishay / BC Components
80769
3.24
HK HEQING ELECTRONICS LIMITED
SI4562DY-T1-GE3
VISHAY GENERAL
1082
4.13
CIS Ltd (CHECK IC SOLUTION LIMITED)
SI4562DY-T1-GE3
Vishay Siliconix
5000
5.02
Gallop Great Holdings (Hong Kong) Limited