(4/5) based on 12 customer reviews
Description
MOSFET N/P-CH 40V 6.8A 8-SOIC Series: TrenchFET? FET Type: N and P-Channel FET Feature: Logic Level Gate Drain to Source Voltage (Vdss): 40V Current - Continuous Drain (Id) @ 25～C: 6.8A, 7.2A Rds On (Max) @ Id, Vgs: 35.5 mOhm @ 5A, 10V Vgs(th) (Max) @ Id: 3V @ 250米A Gate Charge (Qg) @ Vgs: 20nC @ 10V Input Capacitance (Ciss) @ Vds: 640pF @ 20V Power - Max: 3W, 3.3W Operating Temperature: -55～C ~ 150～C (TJ) Mounting Type: Surface Mount Package / Case: 8-SOIC (0.154, 3.90mm Width) Supplier Device Package: 8-SO
| Part Number | SI4561DY-T1-GE3 |
| Main Category | Discrete Semiconductor Products |
| Sub Category | Transistors - FETs, MOSFETs - Arrays |
| Brand | Vishay |
| Description | MOSFET N/P-CH 40V 6.8A 8-SOIC |
| Series | TrenchFET |
| Packaging | |
| FET Type | N and P-Channel |
| FET Feature | Logic Level Gate |
| Drain to Source Voltage (Vdss) | 40V |
| Current - Continuous Drain (Id) @ 25°C | 6.8A, 7.2A |
| Rds On (Max) @ Id, Vgs | 35.5 mOhm @ 5A, 10V |
| Vgs(th) (Max) @ Id | 3V @ 250µA |
| Gate Charge (Qg) (Max) @ Vgs | 20nC @ 10V |
| Input Capacitance (Ciss) (Max) @ Vds | 640pF @ 20V |
| Power - Max | 3W, 3.3W |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Mounting Type | Surface Mount |
| Package / Case | 8-SOIC (0.154", 3.90mm Width) |
| Supplier Device Package | 8-SO |
| Image |  |
SI4561DY-T1-GE3
Vishay Thin Film
22332
0.23
Gallop Great Holdings (Hong Kong) Limited
SI4561DY-T1-GE3
VISH
225800
1.1675
WEISOK ELECTRONICS (HK) TECHNOLOGY LIMITED
SI4561DY-T1-GE3
Vishay / BC Components
1494
2.105
Shenzhen Palmcore Technology Co. Ltd.
SI4561DY-T1-GE3
VISHAY GENERAL
5521
3.0425
NEW IDEAS INDUSTRIAL CO., LIMITED
SI4561DY-T1-GE3
Vishay Siliconix
24830
3.98
OCEANIA INTERNATIONAL INDUSTRIAL LIMITED
