(5/5) based on 3 customer reviews
Description
MOSFET N/P-CH 20V 7.2A 8-SOIC Series: TrenchFET? FET Type: N and P-Channel FET Feature: Logic Level Gate Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25～C: 7.2A, 4.6A Rds On (Max) @ Id, Vgs: 14.5 mOhm @ 9.6A, 10V Vgs(th) (Max) @ Id: 1.8V @ 250米A Gate Charge (Qg) @ Vgs: 18nC @ 4.5V Input Capacitance (Ciss) @ Vds: - Power - Max: 1.1W Operating Temperature: -55～C ~ 150～C (TJ) Mounting Type: Surface Mount Package / Case: 8-SOIC (0.154, 3.90mm Width) Supplier Device Package: 8-SO
| Part Number | SI4511DY-T1-GE3 |
| Main Category | Discrete Semiconductor Products |
| Sub Category | Transistors - FETs, MOSFETs - Arrays |
| Brand | Vishay |
| Description | MOSFET N/P-CH 20V 7.2A 8-SOIC |
| Series | TrenchFET |
| Packaging | |
| FET Type | N and P-Channel |
| FET Feature | Logic Level Gate |
| Drain to Source Voltage (Vdss) | 20V |
| Current - Continuous Drain (Id) @ 25°C | 7.2A, 4.6A |
| Rds On (Max) @ Id, Vgs | 14.5 mOhm @ 9.6A, 10V |
| Vgs(th) (Max) @ Id | 1.8V @ 250µA |
| Gate Charge (Qg) (Max) @ Vgs | 18nC @ 4.5V |
| Input Capacitance (Ciss) (Max) @ Vds | - |
| Power - Max | 1.1W |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Mounting Type | Surface Mount |
| Package / Case | 8-SOIC (0.154", 3.90mm Width) |
| Supplier Device Package | 8-SO |
| Image |  |
SI4511DY-T1-GE3
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