Part Number | SI4442DY-T1-E3 |
Main Category | Discrete Semiconductor Products |
Sub Category | Transistors - FETs, MOSFETs - Single |
Brand | Vishay |
Description | MOSFET N-CH 30V 15A 8-SOIC |
Series | TrenchFET |
Packaging | Cut Tape (CT) |
FET Type | N-Channel |
Technology | MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss) | 30V |
Current - Continuous Drain (Id) @ 25°C | 15A (Ta) |
Drive Voltage (Max Rds On, Min Rds On) | 2.5V, 10V |
Vgs(th) (Max) @ Id | 1.5V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs | 50nC @ 4.5V |
Input Capacitance (Ciss) (Max) @ Vds | - |
Vgs (Max) | ±12V |
FET Feature | - |
Power Dissipation (Max) | 1.6W (Ta) |
Rds On (Max) @ Id, Vgs | 4.5 mOhm @ 22A, 10V |
Operating Temperature | -55°C ~ 150°C (TJ) |
Mounting Type | Surface Mount |
Supplier Device Package | 8-SO |
Package / Case | 8-SOIC (0.154", 3.90mm Width) |
Image |
Hot Offer
SI4442DY-T1-E3
Vishay Siliconix
1610
6.02
Orient Power Technology (HK) Co., Limited
SI4442DY-T1-E3
Vishay Thin Film
2500
1.67
Xinye International Technology Limited
SI4442DY-T1-E3
VISH
935
2.7575
Gallop Great Holdings (Hong Kong) Limited
SI4442DY-T1-E3
Vishay / BC Components
50000
3.845
Hong Kong Yingweida Electronics Co., Ltd.
SI4442DY-T1-E3
VISHAY GENERAL
226000
4.9325
TERNARY UNION CO., LIMITED