Part Number | SI4004DYT1GE3 |
Main Category | Discrete Semiconductor Products |
Sub Category | Transistors - FETs, MOSFETs - Single |
Brand | Vishay |
Description | MOSFET N-CH 20V 12A 8-SOIC |
Series | TrenchFET |
Packaging | |
FET Type | N-Channel |
Technology | MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss) | 20V |
Current - Continuous Drain (Id) @ 25°C | 12A (Tc) |
Drive Voltage (Max Rds On, Min Rds On) | - |
Vgs(th) (Max) @ Id | 2.5V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs | 33nC @ 10V |
Input Capacitance (Ciss) (Max) @ Vds | 1280pF @ 10V |
Vgs (Max) | - |
FET Feature | - |
Power Dissipation (Max) | 2.5W (Ta), 5W (Tc) |
Rds On (Max) @ Id, Vgs | 13.8 mOhm @ 11A, 10V |
Operating Temperature | -55°C ~ 150°C (TJ) |
Mounting Type | Surface Mount |
Supplier Device Package | 8-SO |
Package / Case | 8-SOIC (0.154", 3.90mm Width) |
Image |
SI4004DY-T1-GE3
Vishay Thin Film
2992
1.44
HXY Electronics (HK) Co.,Limited
SI4004DY-T1-GE3
VISH
8779
1.8775
Far East Electronics Technology Limited
SI4004DY-T1-GE3
Vishay / BC Components
5587
2.315
Shenzhen WTX Capacitor Co., Ltd.
SI4004DY-T1-GE3
VISHAY GENERAL
4221
2.7525
WEISOK ELECTRONICS (HK) TECHNOLOGY LIMITED
SI4004DY-T1-GE3
Vishay Siliconix
5869
3.19
CIS Ltd (CHECK IC SOLUTION LIMITED)