Description
MOSFET 2P-CH 20V 1.6A 6-TSOP Series: TrenchFET? FET Type: 2 P-Channel (Dual) FET Feature: Logic Level Gate Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25~C: 1.6A Rds On (Max) @ Id, Vgs: 185 mOhm @ 1.9A, 4.5V Vgs(th) (Max) @ Id: 1.1V @ 250米A Gate Charge (Qg) @ Vgs: 5nC @ 4.5V Input Capacitance (Ciss) @ Vds: - Power - Max: 800mW Operating Temperature: -55~C ~ 150~C (TJ) Mounting Type: Surface Mount Package / Case: SOT-23-6 Thin, TSOT-23-6 Supplier Device Package: 6-TSOP
Part Number | SI3981DV-T1-GE3 |
Main Category | Discrete Semiconductor Products |
Sub Category | Transistors - FETs, MOSFETs - Arrays |
Brand | Vishay |
Description | MOSFET 2P-CH 20V 1.6A 6-TSOP |
Series | TrenchFET |
Packaging | Tape & Reel (TR) |
FET Type | 2 P-Channel (Dual) |
FET Feature | Logic Level Gate |
Drain to Source Voltage (Vdss) | 20V |
Current - Continuous Drain (Id) @ 25°C | 1.6A |
Rds On (Max) @ Id, Vgs | 185 mOhm @ 1.9A, 4.5V |
Vgs(th) (Max) @ Id | 1.1V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs | 5nC @ 4.5V |
Input Capacitance (Ciss) (Max) @ Vds | - |
Power - Max | 800mW |
Operating Temperature | -55°C ~ 150°C (TJ) |
Mounting Type | Surface Mount |
Package / Case | SOT-23-6 Thin, TSOT-23-6 |
Supplier Device Package | 6-TSOP |
Image |
SI3981DV-T1-GE3
Vishay Thin Film
39200
1.83
HK HEQING ELECTRONICS LIMITED
SI3981DV-T1-GE3
VISH
5000000
3.105
Hongkong Shengshi Electronics Limited
SI3981DV-T1-GE3
Vishay / BC Components
3000
4.38
Gallop Great Holdings (Hong Kong) Limited
SI3981DV-T1-GE3
VISHAY GENERAL
46000
5.655
WEISOK ELECTRONICS (HK) TECHNOLOGY LIMITED
SI3981DV-T1-GE3
Vishay Siliconix
4868000
6.93
Shenzhen WTX Capacitor Co., Ltd.