Part Number | SI2392DS-T1-GE3 |
Main Category | Discrete Semiconductor Products |
Sub Category | Transistors - FETs, MOSFETs - Single |
Brand | Vishay |
Description | MOSFET N-CH 100V 3.1A SOT-23 |
Series | TrenchFET |
Packaging | |
FET Type | N-Channel |
Technology | MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss) | 100V |
Current - Continuous Drain (Id) @ 25°C | 3.1A (Tc) |
Drive Voltage (Max Rds On, Min Rds On) | - |
Vgs(th) (Max) @ Id | 3V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs | 10.4nC @ 10V |
Input Capacitance (Ciss) (Max) @ Vds | 196pF @ 50V |
Vgs (Max) | - |
FET Feature | - |
Power Dissipation (Max) | 1.25W (Ta), 2.5W (Tc) |
Rds On (Max) @ Id, Vgs | 126 mOhm @ 2A, 10V |
Operating Temperature | -55°C ~ 150°C (TJ) |
Mounting Type | Surface Mount |
Supplier Device Package | SOT-23 |
Package / Case | TO-236-3, SC-59, SOT-23-3 |
Image |
SI2392DS-T1-GE3
Vishay Thin Film
27731
1.23
Gallop Great Holdings (Hong Kong) Limited
SI2392DS-T1-GE3
VISH
6000
1.8175
Yingxinyuan INT'L (Group) Limited
SI2392DS-T1-GE3
Vishay / BC Components
27000
2.405
N&S Electronic Co., Limited
SI2392DS-T1-GE3
VISHAY GENERAL
20000
2.9925
N&S Electronic Co., Limited
SI2392DS-T1-GE3
Vishay Siliconix
38731
3.58
CIS Ltd (CHECK IC SOLUTION LIMITED)