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Description
Feb 2, 2009 Ordering Information: Si2318DS -T1-E3 (Lead (Pb)-free). Si2318DS -T1-GE3 ( Lead (Pb)-free and Halogen-free). ABSOLUTE MAXIMUM Vishay Siliconix. SPICE Device Model Si2318DS . N-Channel 40-V (D-S) MOSFET. CHARACTERISTICS. N-Channel Vertical DMOS. Macro Model ( Model Vishay Siliconix. Si2318DS_RC. Document Number: 70508. Revision: 03-May- 07 www.vishay.com. 1. R-C Thermal Model Parameters. DESCRIPTION. Aug 18, 2009 1. B160B, 1A, 60V Schottky diode. L1. 1. MMS1038-223ML, 22 H, 2.34A inductor . N1, N2. 2. SI2318DS , 40V, 3A, n-channel MOSFET (SOT23). C6. 2.2 F. 16V. C4 2.2 F 50V. R2. 147k. C5 1.0 F 16V. R3 1.0k. R4. 0.22. D1 B140-13. Q1 Si2318DS . HD. EN. CS. GATE. ROsc. VIN. HV9910B. VDD. GND. C2.
| Part Number | SI2318DS |
| Brand | Vishay |
| Image |  |
SI2318DS
Vishay Thin Film
30000
0.9
Gallop Great Holdings (Hong Kong) Limited
SI2318DS
VISH
16000
1.9975
Belt (HK) Electronics Co
SI2318DS
Vishay / BC Components
33151
3.095
ATLANTIC TECHNOLOGY LIMITED
SI2318DS
VISHAY GENERAL
24000
4.1925
N&S Electronic Co., Limited
SI2318DS
Vishay Siliconix
2800
5.29
Nosin (HK) Electronics Co.
