Vishay

Description

Datasheet Sep 15, 2003 FEATURES. D TrenchFETr Power MOSFET. D 100% Rg Tested. Si2306DS . Vishay Siliconix. Document Number: 70827. S-31873 Rev. Vishay Siliconix. Specification Comparison. Document Number: 74057. Revision: 06-Nov-06 www.vishay.com. 1. Si2306BDS vs. Si2306DS . Description: SPICE Device Model Si2306DS . N-Channel 30-V (D-S) MOSFET. CHARACTERISTICS. N-Channel Vertical DMOS. Macro Model (Subcircuit Model). Level 3 Si2306DS . N-Channel 1.25-W, 2.5-V MOSFET. VDS (V). rDS(on) ( ). ID (A). 20. 0.085 @ VGS = 4.5 V. 3.5. 20. 0.115 @ VGS = 2.5 V. 2.4. G. S. D. Top View. 2. 3. Oct 14, 2003 20. 0.045. 0.065. 12. 5.7. TSOP-6. Si3454ADV. 30. 20. 0.06. 0.085. 9. 4.5. TSOP- 6. Si2306DS . 30. 20. 0.057. 0.094. 8.5. 4.2. SOT-23. Si1302DL.