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Description
Ordering Information: Si1563EDH - T1 - E3 (Lead (Pb)-free). Si1563EDH - T1 - GE3 ( Lead (Pb)-free and Halogen-free). ABSOLUTE MAXIMUM RATINGS (TA = 25 +. C1. 330uF. +. C1. 330uF. R69 0R. R69 0R. C76. 100NF. C76. 100NF. R8. 100K. R8. 100K. C5. 1uF. C5. 1uF. Q2. Si1563EDH - T1 - E3 . Q2. Si1563EDH - T1 - E3 . Dec 16, 2013 Si1563EDH. Q1 .. E3. E5. E7. 30. B4. A3-f. A3-e. A3-d. 9. D3-a. D3-b. D3-c. B9. 31. A3-a. A3-b. A3-c. B10 SI1563EDH - T1 - E3 . 1. 3. 2. 4. 5. Si1563EDH . N. 20. 12. 0.280. 0.36. 0.450. 1.28. 0.65. 0.74. P. -20. 12. 0.490. 0.750. 1.10. 1.00. 1.2. 0.3. Si1553DL. N. 20. 12. 0.385. 0.63. 0.7. 0.8. 0.3. P. -20. 12. Nov 9, 2015 Support for ISO7816 T0/ T1 Smart Card, Hardware Handshaking, RS485 Support. . Full Modem Signal Si1563EDH . Q2. Si1563EDH . 1. 3.
| Part Number | SI1563EDHT1E3 |
| Main Category | Discrete Semiconductor Products |
| Sub Category | Transistors - FETs, MOSFETs - Arrays |
| Brand | Vishay |
| Description | MOSFET N/P-CH 20V 1.13A SC70-6 |
| Series | TrenchFET |
| Packaging | |
| FET Type | N and P-Channel |
| FET Feature | Logic Level Gate |
| Drain to Source Voltage (Vdss) | 20V |
| Current - Continuous Drain (Id) @ 25°C | 1.13A, 880mA |
| Rds On (Max) @ Id, Vgs | 280 mOhm @ 1.13A, 4.5V |
| Vgs(th) (Max) @ Id | 1V @ 100µA |
| Gate Charge (Qg) (Max) @ Vgs | 1nC @ 4.5V |
| Input Capacitance (Ciss) (Max) @ Vds | - |
| Power - Max | 570mW |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Mounting Type | Surface Mount |
| Package / Case | 6-TSSOP, SC-88, SOT-363 |
| Supplier Device Package | SC-70-6 (SOT-363) |
| Image |  |
SI1563EDH-T1-E3
Vishay Thin Film
7983
0.93
HK HEQING ELECTRONICS LIMITED
SI1563EDH-T1-E3
VISH
3206
1.82
Gallop Great Holdings (Hong Kong) Limited
SI1563EDH-T1-E3
Vishay / BC Components
46000
2.71
WEISOK ELECTRONICS (HK) TECHNOLOGY LIMITED
SI1563EDHT1E3
VISHAY GENERAL
5280
3.6
FLOWER GROUP(HK)CO.,LTD
SI1563EDH-T1-E3
Vishay Siliconix
16000
4.49
Ande Electronics Co., Limited
