(4/5) based on 19 customer reviews
Description
SGW25N120 . Power Semiconductors. 1. Rev. 2.5 Nov. 09. Fast IGBT in NPT- technology. 40% lower Eoff compared to previous generation. Short circuit Edited by INFINEON Technologies AI PS DD HV3, L 7151-S, Edition 2, 03.09. 2003. IGBT Chip in NPT-technology. This chip is used for: . SGW25N120 . 1. 2. 3. Material Content Data Sheet. Sales Product Name. SGW25N120 . Issued. 29. August 2013. MA#. MA000792442. Package. PG-TO247-3-44. Weight*. Jan 17, 2008 2A. SGD02N120. SGB02N120. SGP02N120. 7A. SGB07N120. SGP07N120. 15A . SGB15N120. SGP15N120. SGW15N120. 25A. SGW25N120 . Jan 17, 2008 2A. SGD02N120. SGB02N120. SGP02N120. 7A. SGB07N120. SGP07N120. 15A . SGB15N120. SGP15N120. SGW15N120. 25A. SGW25N120 .
| Part Number | SGW25N120 |
| Main Category | Discrete Semiconductor Products |
| Sub Category | Transistors - IGBTs - Single |
| Brand | Vishay |
| Description | IGBT 1200V 46A 313W TO247-3 |
| Series | - |
| Packaging | Tube |
| IGBT Type | NPT |
| Voltage - Collector Emitter Breakdown (Max) | 1200V |
| Current - Collector (Ic) (Max) | 46A |
| Current - Collector Pulsed (Icm) | 84A |
| Vce(on) (Max) @ Vge, Ic | 3.6V @ 15V, 25A |
| Power - Max | 313W |
| Switching Energy | 3.7mJ |
| Input Type | Standard |
| Gate Charge | 225nC |
| Td (on/off) @ 25°C | 45ns/730ns |
| Test Condition | 800V, 25A, 22 Ohm, 15V |
| Reverse Recovery Time (trr) | - |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Mounting Type | Through Hole |
| Package / Case | TO-247-3 |
| Supplier Device Package | PG-TO247-3 |
| Image |  |
SGW25N120
Vishay Thin Film
320
1.22
Gallop Great Holdings (Hong Kong) Limited
SGW25N120
VISH
25
2.355
FLOWER GROUP(HK)CO.,LTD
SGW25N120
Vishay / BC Components
3120
3.49
Belt (HK) Electronics Co
SGW25N120
VISHAY GENERAL
468540
4.625
Cicotex Electronics (HK) Limited
SGW25N120
Vishay Siliconix
1000
5.76
Yingxinyuan INT'L (Group) Limited
